450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMW6S010GNR1
450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMW6S010NR1
0.6~1.2GHz LNA , 29dB Gain,1.2dBNFHGC302
10~40GHz LNA , 10dB Gain,5dBNFHGC410
射频低噪声放大器,3.0 ~ 3.7GHzMLN3037
射频低噪声放大器,20 MHz - 500 MHzMLNM0250A
136–941 MHz, 4 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTORAFT05MS004NT1
136–941 MHz, 6 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTORAFT05MS006NT1
1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETsMRF8S18120HSR3
1.8-2000 MHz, 100 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORSMRFE6VP100HR5
1.8-2000 MHz, 100 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORSMRFE6VP100HSR5
1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETMW6S004NT1
2500-2700 MHz, 4 W AVG., 28 V WiMAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERSMW7IC2725GNR1
728--960 MHz, 1.6 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERMW7IC915NT1
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