射频低噪声放大器,2.0 ~ 4.0GHzMLN2040A
射频低噪声放大器,5.0 ~ 6.0GHzMLN5060A
1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTORSMRFE6VS25NR1
1805-2170 MHz, 2.4 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERMW7IC2020NT1
728--960 MHz, 1.6 W AVG., 28 V SINGLE W--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERMW7IC915NT1
10~40GHz LNA , 10dB Gain,5dBNFHGC302
880 MHz, 10 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFETMRFE6S9045NR1
1.8-600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORSMRFE6VP61K25HR5
1.8-2000 MHz, 25 W, 50 V WIDEBAND RF POWER LDMOS TRANSISTORMRFE6VS25LR5
射频限幅放大器,2.4GHz -3.2GHzMLT2432B
射频低噪声放大器,4.5 ~ 5.5GHzMLN4555A
880 MHz, 14 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL BROADBAND RF POWER MOSFETMRFE6S9060NR1
880 MHz, 27 W AVG., 28 V SINGLE N-CDMA, GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETsMRFE6S9125NR1
1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMRFE6VP5600HSR5
1805–2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORSAFT20S015GNR1
1.8–600 MHz, 150 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORSMRFE6VP5150NR1
1.8-600 MHz, 600 W CW, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETsMRFE6VP5600HR5
470-860 MHz, 600 W, 50 V LDMOS BROADBAND RF POWER TRANSISTORSMRFE6VP8600HR5
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